IRFB4215PBF

N-Channel MOSFET, 60V, 115A, 9mR, TO-220AB

N-Channel Power MOSFET, 60V Drain-Source Voltage, 115A Continuous Drain Current, and 9mΩ On-State Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 270W, and operates from -55°C to 175°C. Includes a 4.08nF input capacitance and turn-off delay time of 77ns. RoHS compliant and lead-free.

PackageTO-220AB

Current Rating115A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

International Rectifier IRFB4215PBF technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	115A
Current Rating	115A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	9mR
Drain to Source Voltage (Vdss)	60V
Dual Supply Voltage	60V
Fall Time	110ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4.08nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	270W
Mount	Through Hole
Nominal Vgs	4V
Number of Elements	1
On-State Resistance	9R
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	270W
Radiation Hardening	No
Rds On Max	9mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Turn-Off Delay Time	77ns
DC Rated Voltage	60V