International Rectifier
IRFB4229PBF
Power Field-Effect Transistor, 46A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
PackageTO-220AB
MountingThrough Hole
Power330W
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Technical Specifications
International Rectifier IRFB4229PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 46MR |
| Dual Supply Voltage | 250V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.02mm |
| Input Capacitance | 4.56nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB4229PBF Datasheet
Download the complete datasheet for International Rectifier IRFB4229PBF to view detailed technical specifications.
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