N-channel MOSFET with 230V Drain to Source Breakdown Voltage and 56A Continuous Drain Current. Features 37mΩ Max Rds On and 370W Max Power Dissipation. Packaged in TO-220AB for through-hole mounting, operating from -40°C to 175°C. Includes 5.51nF input capacitance and 31ns turn-on delay. RoHS compliant.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power370W
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Technical Specifications
International Rectifier IRFB4233PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 56A |
| Drain to Source Breakdown Voltage | 230V |
| Drain to Source Voltage (Vdss) | 230V |
| Dual Supply Voltage | 276V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.02mm |
| Input Capacitance | 5.51nF |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 370W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 370W |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 31ns |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB4233PBF Datasheet
Download the complete datasheet for International Rectifier IRFB4233PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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