International Rectifier
IRFB42N20D
Power Field-Effect Transistor, 44A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB42N20D technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 3.43nF |
| Max Power Dissipation | 2.4W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 55mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFB42N20D Datasheet
Download the complete datasheet for International Rectifier IRFB42N20D to view detailed technical specifications.
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