N-Channel Power MOSFET, 100V Drain-Source Voltage, 127A Continuous Drain Current, and 6mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package for through-hole mounting, with a maximum power dissipation of 250W. Operating across a wide temperature range from -55°C to 175°C, it offers fast switching characteristics with turn-on delay of 20ns and fall time of 57ns. The component is RoHS compliant and utilizes a 1-element design.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
International Rectifier IRFB4310ZGPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 127A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 6.86nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB4310ZGPBF Datasheet
Download the complete datasheet for International Rectifier IRFB4310ZGPBF to view detailed technical specifications.
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