N-Channel Power MOSFET, 100V Drain-Source Voltage, 127A Continuous Drain Current, and 6mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package for through-hole mounting, with a maximum power dissipation of 250W. Operating across a wide temperature range from -55°C to 175°C, it offers fast switching characteristics with turn-on delay of 20ns and fall time of 57ns. The component is RoHS compliant and utilizes a 1-element design.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
International Rectifier IRFB4310ZGPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
127A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
57ns
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
6.86nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
250W
Radiation Hardening
No
Rds On Max
6mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
55ns
Turn-On Delay Time
20ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFB4310ZGPBF Datasheet
Download the complete datasheet for International Rectifier IRFB4310ZGPBF to view detailed technical specifications.
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