International Rectifier
IRFB9N30APBF
Power Field-Effect Transistor, 9.3A I(D), 300V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Technical Specifications
International Rectifier IRFB9N30APBF technical specifications.
General
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB9N30APBF Datasheet
Download the complete datasheet for International Rectifier IRFB9N30APBF to view detailed technical specifications.
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