N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 98A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 23mΩ drain-source on-resistance and a maximum power dissipation of 650W. Operating across a wide temperature range from -55°C to 175°C, it includes fast switching characteristics with turn-on delay of 23ns and fall time of 77ns. The component is designed for through-hole mounting and is RoHS compliant.
Current Rating98A
MountingThrough Hole
PolarityN-CHANNEL
Power650W
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Technical Specifications
International Rectifier IRFBA90N20DPBF technical specifications.
General
| Continuous Drain Current (ID) | 98A |
| Current Rating | 98A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 23mR |
| Dual Supply Voltage | 200V |
| Fall Time | 77ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.5mm |
| Input Capacitance | 6.08nF |
| Lead Free | Lead Free |
| Length | 11mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| On-State Resistance | 23R |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 650W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 200V |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFBA90N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFBA90N20DPBF to view detailed technical specifications.
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