N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 98A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 23mΩ drain-source on-resistance and a maximum power dissipation of 650W. Operating across a wide temperature range from -55°C to 175°C, it includes fast switching characteristics with turn-on delay of 23ns and fall time of 77ns. The component is designed for through-hole mounting and is RoHS compliant.
Current Rating98A
MountingThrough Hole
PolarityN-CHANNEL
Power650W
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Technical Specifications
International Rectifier IRFBA90N20DPBF technical specifications.
General
Continuous Drain Current (ID)
98A
Current Rating
98A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
23mR
Dual Supply Voltage
200V
Fall Time
77ns
Gate to Source Voltage (Vgs)
30V
Height
16.5mm
Input Capacitance
6.08nF
Lead Free
Lead Free
Length
11mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
650W
Mount
Through Hole
Nominal Vgs
5V
Number of Elements
1
On-State Resistance
23R
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
650W
Radiation Hardening
No
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
39ns
Turn-On Delay Time
23ns
DC Rated Voltage
200V
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFBA90N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFBA90N20DPBF to view detailed technical specifications.
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