International Rectifier
IRFBE20
Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Current Rating1.8A
Power54W
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Technical Specifications
International Rectifier IRFBE20 technical specifications.
General
Continuous Drain Current (ID)
1.8A
Current Rating
1.8A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
6.5R
Drain to Source Voltage (Vdss)
800V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Package Quantity
1000
Packaging
Rail/Tube
Power Dissipation
54W
RoHS Compliant
No
DC Rated Voltage
800V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRFBE20 Datasheet
Download the complete datasheet for International Rectifier IRFBE20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.