International Rectifier
IRFBE20PBF
Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
PackageTO-220AB
Current Rating1.8A
MountingThrough Hole
Power54W
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Technical Specifications
International Rectifier IRFBE20PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 1.8A |
| Current Rating | 1.8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 6.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Dual Supply Voltage | 800V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Packaging | Bulk |
| Power Dissipation | 54W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFBE20PBF Datasheet
Download the complete datasheet for International Rectifier IRFBE20PBF to view detailed technical specifications.
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