International Rectifier
IRFBE30
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Current Rating4.1A
Power125W
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Technical Specifications
International Rectifier IRFBE30 technical specifications.
General
Continuous Drain Current (ID)
4.1A
Current Rating
4.1A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
3R
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Package Quantity
1000
Packaging
Rail/Tube
Power Dissipation
125W
RoHS Compliant
No
DC Rated Voltage
800V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRFBE30 Datasheet
Download the complete datasheet for International Rectifier IRFBE30 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.