International Rectifier
IRFBE30PBF
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Current Rating4.1A
Power200W
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Technical Specifications
International Rectifier IRFBE30PBF technical specifications.
General
| Continuous Drain Current (ID) | 84A |
| Current Rating | 4.1A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 12R |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFBE30PBF Datasheet
Download the complete datasheet for International Rectifier IRFBE30PBF to view detailed technical specifications.
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