IRFBE30PBF

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Current Rating4.1A

Power200W

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International Rectifier IRFBE30PBF technical specifications.

Continuous Drain Current (ID)

84A

Current Rating

4.1A

Drain to Source Breakdown Voltage

800V

Drain to Source Resistance

12R

Gate to Source Voltage (Vgs)

20V

Lead Free

Package Quantity

1000

Packaging

Rail/Tube

Power Dissipation

200W

RoHS Compliant

Yes

DC Rated Voltage

800V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.