International Rectifier
IRFBE30S
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
PackageTO-262
Current Rating4.1A
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Technical Specifications
International Rectifier IRFBE30S technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 4.1A |
| Current Rating | 4.1A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Voltage (Vdss) | 800V |
| Lead Free | Contains Lead |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| RoHS Compliant | No |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFBE30S Datasheet
Download the complete datasheet for International Rectifier IRFBE30S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.