International Rectifier
IRFBG30PBF
Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Current Rating3.1A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRFBG30PBF technical specifications.
General
| Continuous Drain Current (ID) | 3.1A |
| Current Rating | 3.1A |
| Drain to Source Breakdown Voltage | 1kV |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.76mm |
| Input Capacitance | 980pF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Packaging | Bulk |
| Power Dissipation | 200W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 89ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 1kV |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFBG30PBF Datasheet
Download the complete datasheet for International Rectifier IRFBG30PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.