International Rectifier
IRFD110
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4
PackageDIP
Current Rating1A
MountingThrough Hole
Power1.3W
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Technical Specifications
International Rectifier IRFD110 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Resistance | 540mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Mount | Through Hole |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Packaging | Bulk |
| Power Dissipation | 1.3W |
| RoHS Compliant | No |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFD110 Datasheet
Download the complete datasheet for International Rectifier IRFD110 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.