N-channel MOSFET transistor in a DIP package for through-hole mounting. Features a 100V drain-source breakdown voltage and a continuous drain current of 1A. Offers a low on-resistance of 540mΩ at a nominal gate-source voltage of 4V, with a maximum gate-source voltage of 20V. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 1.3W.
PackageDIP
Current Rating1A
MountingThrough Hole
Power1.3W
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Technical Specifications
International Rectifier IRFD110PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Packaging | Bulk |
| Power Dissipation | 1.3W |
| Reach SVHC Compliant | No |
| Termination | Through Hole |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFD110PBF Datasheet
Download the complete datasheet for International Rectifier IRFD110PBF to view detailed technical specifications.
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