International Rectifier
IRFD9120
Power Field-Effect Transistor, 1A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4
PackageDIP
Current Rating-1A
MountingThrough Hole
Power1.3W
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Technical Specifications
International Rectifier IRFD9120 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Current Rating | -1A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Voltage (Vdss) | -100V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Bulk |
| Power Dissipation | 1.3W |
| RoHS Compliant | No |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFD9120 Datasheet
Download the complete datasheet for International Rectifier IRFD9120 to view detailed technical specifications.
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