P-channel power MOSFET featuring a -100V drain-to-source breakdown voltage and a continuous drain current of -1A. This silicon, metal-oxide semiconductor FET is housed in a DIP package with a power dissipation of 1.3W. It is lead-free and RoHS compliant, supplied in bulk packaging.
PackageDIP
Current Rating-1A
Power1.3W
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Technical Specifications
International Rectifier IRFD9120PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | -1A |
| Current Rating | -1A |
| Drain to Source Breakdown Voltage | -100V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 1.3W |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFD9120PBF Datasheet
Download the complete datasheet for International Rectifier IRFD9120PBF to view detailed technical specifications.
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