International Rectifier
IRFE120
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-39, LCC-18
MountingSurface Mount
Power14W
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Technical Specifications
International Rectifier IRFE120 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 14W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFE120 Datasheet
Download the complete datasheet for International Rectifier IRFE120 to view detailed technical specifications.
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