International Rectifier
IRFE130
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
PackageLCC
MountingSurface Mount
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Technical Specifications
International Rectifier IRFE130 technical specifications.
General
| Package/Case | LCC |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFE130 Datasheet
Download the complete datasheet for International Rectifier IRFE130 to view detailed technical specifications.
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