International Rectifier
IRFF9130
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
PackageTO-39
MountingThrough Hole
Power25W
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Technical Specifications
International Rectifier IRFF9130 technical specifications.
General
| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 300mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFF9130 Datasheet
Download the complete datasheet for International Rectifier IRFF9130 to view detailed technical specifications.
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