International Rectifier
IRFF9230
Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
PackageTO-39
MountingThrough Hole
Power25W
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Technical Specifications
International Rectifier IRFF9230 technical specifications.
General
Package/Case
TO-39
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Dual Supply Voltage
-200V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Lead Length
14.22mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Nominal Vgs
-4V
Number of Elements
1
Packaging
Bulk
Power Dissipation
25W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Weight
0.98g
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRFF9230 Datasheet
Download the complete datasheet for International Rectifier IRFF9230 to view detailed technical specifications.
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