N-channel MOSFET with 30V drain-source breakdown voltage and 16A continuous drain current. Features low 7.1mOhm drain-source on-resistance and 9.6nC input capacitance. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.8W. Surface-mount QFN package with dimensions of 3mm x 3mm x 0.95mm.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRFH3702TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.1MR |
| Fall Time | 5.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 1.51nF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 7.1mR |
| Reach SVHC Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 9.6ns |
| Width | 3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH3702TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH3702TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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