International Rectifier
IRFH3702TRPBF
Power Field-Effect Transistor, 16A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
MountingSurface Mount
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Technical Specifications
International Rectifier IRFH3702TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 1.51nF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 9.6ns |
| Width | 3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH3702TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH3702TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.