N-channel power MOSFET featuring 60V drain-source breakdown voltage and 21A continuous drain current. Offers a low 4.1mΩ drain-source resistance at a nominal 4V gate-source voltage. This surface-mount device is housed in a 6x5mm QFN package with a maximum power dissipation of 250W. Operating temperature range is -55°C to 150°C, with fast switching characteristics including a 9.6ns turn-on delay and 12ns fall time. The component is RoHS compliant.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5006TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 4.175nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 4.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 9.6ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5006TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5006TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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