N-channel Silicon MOSFET featuring 60V drain-source voltage and a maximum on-resistance of 4.1mΩ. This power field-effect transistor offers a continuous drain current of 21A and a nominal gate-source voltage of 2V. Designed for high-performance applications, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.6W. The component is RoHS compliant and housed in an 8-pin QFN package.
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Technical Specifications
International Rectifier IRFH5006TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 4.1MR |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5006TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5006TRPBF to view detailed technical specifications.
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