N-CHANNEL MOSFET with 75V Drain-Source Breakdown Voltage and 5.9mR Drain-Source On Resistance. Features 100A continuous drain current, 17A pulsed drain current, and 65nC gate charge. Operates with a 4V nominal gate-source voltage and a maximum gate-source voltage of 20V. Surface mountable in a QFN package, this component offers a maximum power dissipation of 3.6W and operates between -55°C and 150°C. RoHS compliant with fast switching times including 10ns turn-on and 11ns fall time.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5007TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 5.9mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 5.9MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 4.29nF |
| Lead Free | Lead Free |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 5.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5007TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5007TR2PBF to view detailed technical specifications.
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