N-channel silicon power MOSFET featuring 100V drain-source voltage and 13A continuous drain current. Offers a low 9mΩ maximum drain-source on-resistance. Designed for surface mount applications with a QFN-8 package, operating from -55°C to 150°C. Includes 4.34nF input capacitance and a maximum power dissipation of 3.6W. Halogen-free and RoHS compliant.
MountingSurface Mount
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Technical Specifications
International Rectifier IRFH5010TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 9MR |
| Input Capacitance | 4.34nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5010TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5010TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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