N-channel silicon power MOSFET featuring 100V drain-source voltage and 13A continuous drain current. Offers a low 9mΩ maximum drain-source on-resistance. Designed for surface mount applications with a QFN-8 package, operating from -55°C to 150°C. Includes 4.34nF input capacitance and a maximum power dissipation of 3.6W. Halogen-free and RoHS compliant.
MountingSurface Mount
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Technical Specifications
International Rectifier IRFH5010TRPBF technical specifications.
General
Continuous Drain Current (ID)
13A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
9MR
Input Capacitance
4.34nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
2V
Package Quantity
4000
Packaging
Tape and Reel
Rds On Max
9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5010TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5010TRPBF to view detailed technical specifications.
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