N-channel power MOSFET featuring 150V drain-source breakdown voltage and 10A continuous drain current. Offers a low 31mΩ drain-source on-resistance at a nominal 5V gate-source voltage. This single-element silicon FET is housed in a compact 6x5mm VQFN package for surface mounting. Designed for high-temperature operation up to 150°C, it boasts fast switching characteristics with a 9.4ns turn-on delay and 3.4ns fall time. RoHS compliant and halogen-free.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5015TR2PBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
31mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
31MR
Fall Time
3.4ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
2.3nF
Lead Free
Lead Free
Length
6.15mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
5V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Rds On Max
31mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
5V
Turn-Off Delay Time
14ns
Turn-On Delay Time
9.4ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5015TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5015TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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