N-channel power MOSFET featuring 150V drain-source breakdown voltage and 10A continuous drain current. Offers a low 31mΩ drain-source on-resistance at a nominal 5V gate-source voltage. This single-element silicon FET is housed in a compact 6x5mm VQFN package for surface mounting. Designed for high-temperature operation up to 150°C, it boasts fast switching characteristics with a 9.4ns turn-on delay and 3.4ns fall time. RoHS compliant and halogen-free.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5015TR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 31MR |
| Fall Time | 3.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Length | 6.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Rds On Max | 31mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 9.4ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5015TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5015TR2PBF to view detailed technical specifications.
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