International Rectifier
IRFH5015TRPBF
Power Field-Effect Transistor, 10A I(D), 150V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8
MountingSurface Mount
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Technical Specifications
International Rectifier IRFH5015TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 56A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 31MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Length | 6.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 9.4ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5015TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5015TRPBF to view detailed technical specifications.
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