N-channel power MOSFET featuring 200V drain-source breakdown voltage and 5.1A continuous drain current. Offers a low 55mΩ drain-source on-resistance at a nominal 5V gate-source voltage. This silicon, metal-oxide semiconductor FET is housed in a 6x5mm VQFN package for surface mounting, with a maximum power dissipation of 3.6W. Operating temperature range spans from -55°C to 150°C, and the component is halogen-free and RoHS compliant.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5020TR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 55MR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 2.29nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.3ns |
| Width | 6mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5020TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5020TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.