IRFH5020TRPBF

Power Field-Effect Transistor, 5.1A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

MountingSurface Mount

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International Rectifier IRFH5020TRPBF technical specifications.

Continuous Drain Current (ID)	34A
Drain to Source Voltage (Vdss)	200V
Drain-source On Resistance-Max	55MR
Gate to Source Voltage (Vgs)	20V
Height	0.85mm
Input Capacitance	2.29nF
Lead Free	Lead Free
Length	6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	8.3W
Mount	Surface Mount
RoHS Compliant	Yes
Series	HEXFET® Series
Turn-Off Delay Time	21ns
Turn-On Delay Time	9.3ns
Width	5mm

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.