The IRFH5020TRPBF is a 200V HEXFET MOSFET with a maximum continuous drain current of 34A and a maximum drain-source on resistance of 55 milliohms. It has a maximum power dissipation of 8.3W and is designed for surface mount applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The package is a small outline R-PDSO-N5 with dimensions of 6mm in length, 5mm in width, and 0.85mm in height.
International Rectifier IRFH5020TRPBF technical specifications.
| Continuous Drain Current (ID) | 34A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 55MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 2.29nF |
| Lead Free | Lead Free |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.3ns |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFH5020TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.