
N-CHANNEL MOSFET, 250V Vds, 3.8A Continuous Drain Current, 100mΩ Rds On. Features 36nC Qg, 2.15nF Input Capacitance, and 6.1ns Fall Time. Surface mount QFN package, 150°C max operating temperature. RoHS compliant.
International Rectifier IRFH5025TR2PBF technical specifications.
| Package/Case | QFN |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 6.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 2.15nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 20V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 20V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9ns |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFH5025TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.