N-CHANNEL MOSFET, 250V Vds, 3.8A Continuous Drain Current, 100mΩ Rds On. Features 36nC Qg, 2.15nF Input Capacitance, and 6.1ns Fall Time. Surface mount QFN package, 150°C max operating temperature. RoHS compliant.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5025TR2PBF technical specifications.
General
Package/Case
QFN
Continuous Drain Current (ID)
3.8A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
250V
Fall Time
6.1ns
Gate to Source Voltage (Vgs)
20V
Height
0.9mm
Input Capacitance
2.15nF
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
20V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
20V
Turn-Off Delay Time
17ns
Turn-On Delay Time
9ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5025TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5025TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.