N-channel MOSFET featuring 40V drain-source breakdown voltage and 3.5mΩ maximum drain-source on-resistance. This surface-mount component offers a continuous drain current of 24A and a low gate charge of 53nC. Operating within a temperature range of -55°C to 150°C, it boasts fast switching characteristics with turn-on delay time of 9.5ns and fall time of 10ns. The VQFN package ensures compact integration for demanding applications.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power114W
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Technical Specifications
International Rectifier IRFH5104TR2PBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
24A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
3.5mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
3.5MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
0.9mm
Input Capacitance
3.12nF
Lead Free
Lead Free
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
114W
Radiation Hardening
No
Rds On Max
3.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
4V
Turn-Off Delay Time
20ns
Turn-On Delay Time
9.5ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5104TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5104TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.