International Rectifier
IRFH5104TRPBF
Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power114W
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Technical Specifications
International Rectifier IRFH5104TRPBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.12nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 114W |
| Radiation Hardening | No |
| Rds On Max | 3.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 9.5ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5104TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5104TRPBF to view detailed technical specifications.
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