N-Channel Power MOSFET, 60V Vds, 21A continuous drain current, and 5.6mΩ Rds(on) at 4.5Vgs. Features low 9.5ns fall time and 8.1ns turn-on delay, with a maximum power dissipation of 114W. This surface-mount device is housed in a 6x5mm VQFN package, offering a wide operating temperature range from -55°C to 150°C. It is halogen-free and RoHS compliant.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
Quick Jump:
Technical Specifications
International Rectifier IRFH5106TR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 2.46nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 4.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 8.1ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5106TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5106TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
