N-channel MOSFET transistor featuring 60V drain-source breakdown voltage and 100A continuous drain current. Offers a low 5.6mΩ maximum drain-source on-resistance at a nominal 2V gate-source voltage. Designed for surface mount applications with a maximum power dissipation of 114W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 8.1ns and fall time of 9.5ns. Packaged on tape and reel for high-volume production.
MountingSurface Mount
PolarityN-CHANNEL
Power114W
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Technical Specifications
International Rectifier IRFH5106TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5.6MR |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.09nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 114W |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 8.1ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5106TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5106TRPBF to view detailed technical specifications.
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