N-channel MOSFET with 100V drain-source breakdown voltage and 11A continuous drain current. Features low 12.4mΩ Rds(on) at 10Vgs, 4V threshold voltage, and 56.2nC gate charge. This surface-mount component in a QFN package offers fast switching with 7.8ns turn-on delay and 6.4ns fall time. Maximum power dissipation is 114W, with operating temperatures from -55°C to 150°C.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5110TR2PBF technical specifications.
General
Package/Case
QFN
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
12.4mR
Drain to Source Voltage (Vdss)
100V
Fall Time
6.4ns
Gate to Source Voltage (Vgs)
20V
Height
0.85mm
Input Capacitance
3.152nF
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
114W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
12.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
4V
Turn-Off Delay Time
22ns
Turn-On Delay Time
7.8ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5110TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5110TR2PBF to view detailed technical specifications.
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