N-channel MOSFET with 100V drain-source breakdown voltage and 11A continuous drain current. Features low 12.4mΩ Rds(on) at 10Vgs, 4V threshold voltage, and 56.2nC gate charge. This surface-mount component in a QFN package offers fast switching with 7.8ns turn-on delay and 6.4ns fall time. Maximum power dissipation is 114W, with operating temperatures from -55°C to 150°C.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5110TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 12.4mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 3.152nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 12.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 7.8ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5110TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5110TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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