N-channel Power MOSFET, 75V Drain-Source Voltage, 13A Continuous Drain Current, and 9.6mΩ Max Drain-Source On-Resistance. Features include 7.1ns Fall Time, 20ns Turn-Off Delay, and 7.2ns Turn-On Delay. Operates from -55°C to 150°C with 3.6W Max Power Dissipation. Surface mountable in a PQFN package, supplied on tape and reel.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5207TRPBF technical specifications.
General
Package/Case
QFN
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
75V
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
9.6MR
Fall Time
7.1ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.474nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
9.6mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
7.2ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5207TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5207TRPBF to view detailed technical specifications.
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