N-channel Power MOSFET, 75V Drain-Source Voltage, 13A Continuous Drain Current, and 9.6mΩ Max Drain-Source On-Resistance. Features include 7.1ns Fall Time, 20ns Turn-Off Delay, and 7.2ns Turn-On Delay. Operates from -55°C to 150°C with 3.6W Max Power Dissipation. Surface mountable in a PQFN package, supplied on tape and reel.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5207TRPBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 9.6MR |
| Fall Time | 7.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.474nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 9.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7.2ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5207TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5207TRPBF to view detailed technical specifications.
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