N-channel power MOSFET with 25V drain-source breakdown voltage and 40A continuous drain current. Features low 2.2mΩ drain-source resistance and 1.28Ω Rds On max. Designed for surface mount applications in a compact VQFN package, offering 90W max power dissipation. Includes fast switching characteristics with 23ns turn-on and 23ns turn-off delay times.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5250DTR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 2.2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 706pF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 1.28R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 23ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5250DTR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5250DTR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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