N-channel power MOSFET with 25V drain-source breakdown voltage and 40A continuous drain current. Features low 2.2mΩ drain-source resistance and 1.28Ω Rds On max. Designed for surface mount applications in a compact VQFN package, offering 90W max power dissipation. Includes fast switching characteristics with 23ns turn-on and 23ns turn-off delay times.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5250DTR2PBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
2.2mR
Drain to Source Voltage (Vdss)
25V
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
0.85mm
Input Capacitance
706pF
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
1.28R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
23ns
Turn-On Delay Time
23ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5250DTR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5250DTR2PBF to view detailed technical specifications.
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