N-channel MOSFET, 25V drain-source breakdown voltage, 45A continuous drain current, and 1.75mΩ drain-source resistance. Features 1.15mΩ Rds On at 10V Vgs, 52nC gate charge, and 1.8V threshold voltage. Operates with a 20V gate-source voltage, offering 28ns turn-on and 30ns turn-off delay times. Packaged in a VQFN surface-mount case, this RoHS compliant component has a maximum power dissipation of 3.6W and an operating temperature range of -55°C to 150°C.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5250TR2PBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
45A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
1.75mR
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
0.9mm
Input Capacitance
2.93nF
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.8V
Turn-Off Delay Time
30ns
Turn-On Delay Time
28ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5250TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5250TR2PBF to view detailed technical specifications.
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