N-channel MOSFET, 25V drain-source breakdown voltage, 45A continuous drain current, and 1.75mΩ drain-source resistance. Features 1.15mΩ Rds On at 10V Vgs, 52nC gate charge, and 1.8V threshold voltage. Operates with a 20V gate-source voltage, offering 28ns turn-on and 30ns turn-off delay times. Packaged in a VQFN surface-mount case, this RoHS compliant component has a maximum power dissipation of 3.6W and an operating temperature range of -55°C to 150°C.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5250TR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.75mR |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | 25V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 2.93nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 28ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5250TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5250TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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