N-Channel Power MOSFET, 30V Vds, 29A Continuous Drain Current, and 2.5mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a 6mm x 5mm VQFN package with a height of 0.81mm, designed for surface mounting. It offers a maximum power dissipation of 3.6W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 16ns turn-on delay and a 12ns fall time, with an input capacitance of 3.635nF. This component is halogen-free and RoHS compliant.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
Quick Jump:
Technical Specifications
International Rectifier IRFH5302DTR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.81mm |
| Input Capacitance | 3.635nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 2.35V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.35V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 16ns |
| Width | 6mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5302DTR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5302DTR2PBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
