N-Channel Power MOSFET, 30V Vds, 29A Continuous Drain Current, and 2.5mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a 6mm x 5mm VQFN package with a height of 0.81mm, designed for surface mounting. It offers a maximum power dissipation of 3.6W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 16ns turn-on delay and a 12ns fall time, with an input capacitance of 3.635nF. This component is halogen-free and RoHS compliant.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5302DTR2PBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
29A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
0.81mm
Input Capacitance
3.635nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
2.35V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
2.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2.35V
Turn-Off Delay Time
20ns
Turn-On Delay Time
16ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5302DTR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5302DTR2PBF to view detailed technical specifications.
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