N-Channel Power MOSFET, 30V Vds, 23A continuous drain current, and 4.2mΩ Rds(on) at a nominal 1.8V Vgs. This silicon, metal-oxide semiconductor FET features a 6mm x 5mm QFN package with a height of 0.81mm, suitable for surface mounting. It offers a maximum power dissipation of 3.6W and operates within a temperature range of -55°C to 150°C. Turn-on delay is 11ns, turn-off delay is 8.8ns, and fall time is 6.1ns, with an input capacitance of 2.19nF. This component is RoHS compliant.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5303TR2PBF technical specifications.
General
Package/Case
QFN
Continuous Drain Current (ID)
23A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.2mR
Drain to Source Voltage (Vdss)
30V
Fall Time
6.1ns
Gate to Source Voltage (Vgs)
20V
Height
0.81mm
Input Capacitance
2.19nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
4.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
8.8ns
Turn-On Delay Time
11ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5303TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5303TR2PBF to view detailed technical specifications.
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