N-Channel Power MOSFET, 30V Vds, 22A Continuous Drain Current, and 4.5mΩ Rds On. Features a 6mm x 5mm VQFN package with a height of 0.81mm, suitable for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 3.6W. Includes 1.65nF input capacitance and fast switching times with a 6.6ns fall time. RoHS compliant and halogen-free.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5304TR2PBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
22A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
6.6ns
Gate to Source Voltage (Vgs)
20V
Height
0.81mm
Input Capacitance
1.65nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Nominal Vgs
2.35V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2.35V
Turn-Off Delay Time
12ns
Turn-On Delay Time
13ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5304TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5304TR2PBF to view detailed technical specifications.
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