N-CHANNEL MOSFET with 30V Drain-Source Breakdown Voltage and 8.1mR maximum Drain-Source On Resistance. Features a continuous drain current of 15A and a gate-source voltage of 20V. This surface mount component offers a low input capacitance of 1.125nF and fast switching times with turn-on delay of 9ns and fall time of 6.1ns. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 3.6W. Packaged in QFN for tape and reel distribution.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5306TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.1MR |
| Fall Time | 6.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 1.125nF |
| Lead Free | Lead Free |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 8.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 9.1ns |
| Turn-On Delay Time | 9ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5306TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5306TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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