N-channel MOSFET with 20V drain-source breakdown voltage and 1.2mΩ drain-source on-resistance. Features 45A continuous drain current, 10.89nF input capacitance, and 14ns turn-on delay. Operates from -55°C to 150°C, with a maximum power dissipation of 3.6W. Surface mountable in a QFN package, this component is designed for high-efficiency switching applications.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power250W
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Technical Specifications
International Rectifier IRFH6200TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 1.2mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.2MR |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.9mm |
| Input Capacitance | 10.89nF |
| Lead Free | Lead Free |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 1.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | HEXFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 14ns |
| Width | 5mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFH6200TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH6200TR2PBF to view detailed technical specifications.
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