
N-channel MOSFET featuring 75V drain-source breakdown voltage and 8.5mΩ maximum drain-source on-resistance. This surface-mount component offers a continuous drain current of 14A and a maximum power dissipation of 3.6W. Key electrical characteristics include 48nC gate charge and 3.11nF input capacitance, with typical switching times of 9.1ns turn-on delay and 6.5ns fall time. Operating across a temperature range of -55°C to 150°C, it is housed in a QFN package.
International Rectifier IRFH7107TR2PBF technical specifications.
| Package/Case | QFN |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 8.5MR |
| Fall Time | 6.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.11nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 9.1ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for International Rectifier IRFH7107TR2PBF to view detailed technical specifications.
No datasheet is available for this part.
