International Rectifier
IRFH7110TRPBF
Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, E, QFN-8
PackageQFN
MountingSurface Mount
Power3.6W
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Technical Specifications
International Rectifier IRFH7110TRPBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.17mm |
| Input Capacitance | 3.24nF |
| Length | 5.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 13.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 11ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH7110TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH7110TRPBF to view detailed technical specifications.
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