The IRFH8337TRPBF is a single-element HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 12A and a drain to source voltage of 30V. The device is packaged in a QFN package and is designed for surface mount applications. The IRFH8337TRPBF is RoHS compliant and has a maximum power dissipation of 3.2W.
PackageQFN
MountingSurface Mount
Power3.2W
Quick Jump:
Technical Specifications
International Rectifier IRFH8337TRPBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 3.2W |
| Radiation Hardening | No |
| Rds On Max | 12.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH8337TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH8337TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.