International Rectifier
IRFH9310TR2PBF
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package
MountingSurface Mount
PolarityP-CHANNEL
Power3.1W
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Technical Specifications
International Rectifier IRFH9310TR2PBF technical specifications.
General
Continuous Drain Current (ID)
-21A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
4.6mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
70ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
5.25nF
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Package Quantity
400
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Turn-Off Delay Time
65ns
Turn-On Delay Time
25ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH9310TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH9310TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.