International Rectifier
IRFH9310TRPBF
Power Field-Effect Transistor, 21A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
PackageQFN
MountingSurface Mount
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Technical Specifications
International Rectifier IRFH9310TRPBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 5.25nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.9V |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 4.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH9310TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH9310TRPBF to view detailed technical specifications.
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